www.berex.com berex , inc. 3350 scott blvd. #61 - 01 santa clara, ca 95054 tel. (408) 452 - 5595 january 2015 specifications are subject to change without notice. ? berex 2015 rev. 1.3 bc f 240t high efficiency heterojunction power fet chip (. 3 m x 2400 m) the berex bc f 24 0 t is a gaas power mesfet whose nominal 0. 3 micron gate length and 24 00 micron gate width make the product ideally suited to applications requiring high oi p3 linearity and low phase noise while providing high - gain and medium power from dc to 26.5 ghz. th is product is well suited for either wideband or narrow - band applica tions. the BCF240T is produced using state of the art metallization and devices from each wafer are screened to insure reliability . these chips utilize si 3 n 4 passivation for increased reliability. product features ? 30.4 dbm typical output power ? 9.8 db typical power gain @ 12 ghz ? low phase noise ? 0. 3 x 2400 micron recessed gate applications ? commercial ? military / hi - rel ? test & measurement dc characteristic ( t a = 25 c) parameter/test conditions minimum typical maximum unit i dss saturated drain current (v gs = 0v, v ds = 2v) 480 720 960 ma gm transconductance (v ds = 3v, v gs = 50% i dss ) 400 ms vp pinch - off voltage (i ds = 24 00 a, v ds = 3v) - 3.5 - 2.0 v bv gd drain breakdown voltage (i g = 2.4 ma , source open) - 15 - 11 v bv gs source breakdown voltage (i g = 2.4 ma , drain open) - 10 - 7 v r th thermal resistance (au - sn eutectic attach) 23 c/w
www.berex.com berex, inc. 3350 scott blvd. #61 - 01 santa clara, ca 95054 tel. (408) 452 - 5595 january 2015 specifications are subject to change without notice. ? berex 2015 rev. 1.3 bc f 24 0t electrical characteristic ( v ds = 8v, t a = 25 c) parameter/test conditions test frequency minimum typical maximum uni t p 1db output power @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 ghz 18 ghz 28.4 28.1 30.4 30.1 dbm g 1db gain @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 ghz 18 ghz 7.8 5.7 9.8 7.7 db pae pae @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 ghz 18 ghz 26.7 25.5 % electrical characteristic ( v ds = 6v, t a = 25 c) parameter/test conditions test frequency minimum typical maximum uni t p 1db output power @ p 1db (v ds = 6 v, i ds = 50% i dss ) 12 ghz 18 ghz 28.8 28.1 30.8 30.1 dbm g 1db gain @ p 1db (v ds = 6 v, i ds = 50% i dss ) 12 ghz 18 ghz 7.1 5.4 9.1 7.4 db pae pae @ p 1db (v ds = 6 v, i ds = 50% i dss ) 12 ghz 18 ghz 40 33 % maximum ratings (t a = 25 c) parameters absolute continuous v ds v gs i ds i gsf p in t ch t stg p t drain - source voltage gate - source voltage drain current forward gate current input power channel temperature storage temperature total power dissipation 12 v - 8 v i dss 6 0 ma 2 9 dbm 175 c - 60 c - 150 c 5.4 w 8 v - 4v i dss 9.6 ma @ 3db compression 150 c - 60 c - 150 c 4.5 w exceeding any of the above maximum ratings will result in reduced mttf and may cause permanent damage to the device
www.berex.com berex, inc. 3350 scott blvd. #61 - 01 santa clara, ca 95054 tel. (408) 452 - 5595 january 2015 specifications are subject to change without notice. ? berex 2015 rev. 1.3 bc f 24 0t p in _p out /gain, pae (12 ghz) f req. = 12 ghz , v ds = 8 v, i ds = 50% i dss freq. = 12 ghz , v ds = 6 v, i ds = 50% i dss
www.berex.com berex, inc. 3350 scott blvd. #61 - 01 santa clara, ca 95054 tel. (408) 452 - 5595 january 2015 specifications are subject to change without notice. ? berex 2015 rev. 1.3 bc f 24 0t p in _p out /gain, pae (18 ghz) freq. = 18 ghz , v ds = 8 v, i ds = 50% i dss freq. = 18 ghz , v ds = 6 v, i ds = 50% i dss
www.berex.com berex, inc. 3350 scott blvd. #61 - 01 santa clara, ca 95054 tel. (408) 452 - 5595 january 2015 specifications are subject to change without notice. ? berex 2015 rev. 1.3 bc f 24 0t wire bonding options ? gold bonding wire information 1. gate to input transmission line - length and height : 400 um and 250 um - number of wire s : 4 2. drain to output transmission line - length and height : 350 um and 250 um - number of wire s : 4 3. source to ground plate - length and height : 200 um x 250 um - number of wire s : 10 note: the diameter of bonding wires: 1 mil
www.berex.com berex, inc. 3350 scott blvd. #61 - 01 santa clara, ca 95054 tel. (408) 452 - 5595 january 2015 specifications are subject to change without notice. ? berex 2015 rev. 1.3 bc f 24 0t die attach recommend ations : berex recommends the e utectic die attach using au - sn (80% - 20%) pre - forms. the die attach station must have accurate temperature control, and the operation should be performed with parts no hotter than 300c for less than 10 seconds. an inert forming gas (90% n 2 - 10% h 2 ) or clean, dry n 2 should be used. handling precautions : gaas fets are very sensitive to and may be damaged by electrostatic discharge (esd). therefore, proper esd precautions must be taken whenever you are handling these devices. it is critically important that all work surfaces, and assembly equipment, as we ll as the operator be properly grounded when handling these devices to prevent esd damage. storage & shipping : berexs standard chip device shipping package consists of an antistatic gel - pak, holding the chips, placed inside a sealed antistatic and mo isture barrier bag. this packaging is designed to provide a reasonable measure of protection from both mechanical and esd damage. chip devices should be stored in a clean, dry nitrogen gas environment at room temperature until they are required for assem bly. only open the shipping package or perform die assembly in a work area with a class 10,000 or better clean room environment to prevent contamination of the exposed devices. caution : this product contain s gallium arsenide ( gaas ) which can be hazardous to the hum an body and the environment. theref ore, it must be hand led with care and in accordance with all governmental and company regulati ons for the safe han dling and disposal o f hazardous waste. do not burn, destroy, cut, crush or chemically dissolve the produc t. do not lick the product or in any wa y allow it to enter th e mouth. exclude th e product from gener al industrial waste or garbage and dispose of only in a ccordance to applica ble laws and/or ordi nances. disclaimer berex reserves the right to make changes without further notice to any products herein to improve reliability, function or design. berex does not assume any liability arising out of the application or use of any product or circuit described herein. life support policy berex products are not authorized for use as critical components in life support devices without the express written approval of berex. 1. life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b ) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a l ife support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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